%0 Journal Article
%T Large-area integration of two-dimensional materials and their heterostructures by wafer bonding
%V 12
%N 1
%P 917
%W https://pubmed.ncbi.nlm.nih.gov/33568669/
%* 2021 The Author(s)
%U https://www.nature.com/articles/s41467-021-21136-0
%X Integrating two-dimensional (2D) materials into semiconductor manufacturing lines is essential to exploit their material properties in a wide range of application areas. However, current approaches are not compatible with high-volume manufacturing on wafer level. Here, we report a generic methodology for large-area integration of 2D materials by adhesive wafer bonding. Our approach avoids manual handling and uses equipment, processes, and materials that are readily available in large-scale semiconductor manufacturing lines. We demonstrate the transfer of CVD graphene from copper foils (100-mm diameter) and molybdenum disulfide (MoS2) from SiO2/Si chips (centimeter-sized) to silicon wafers (100-mm diameter). Furthermore, we stack graphene with CVD hexagonal boron nitride and MoS2 layers to heterostructures, and fabricate encapsulated field-effect graphene devices, with high carrier mobilities of up to $$4520\;{\mathrm{cm}}^2{\mathrm{V}}^{ - 1}{\mathrm{s}}^{ - 1}$$4520cm2V−1s−1. Thus, our approach is suited for backend of the line integration of 2D materials on top of integrated circuits, with potential to accelerate progress in electronics, photonics, and sensing.
%G en
%J Nature Communications
%A Quellmalz, Arne
%A Wang, Xiaojing
%A Sawallich, Simon
%A Uzlu, Burkay
%A Otto, Martin
%A Wagner, Stefan
%A Wang, Zhenxing
%A Prechtl, Maximilian
%A Hartwig, Oliver
%A Luo, Siwei
%A Duesberg, Georg S.
%A Lemme, Max C.
%A Gylfason, Kristinn B.
%A Roxhed, Niclas
%A Stemme, Göran
%A Niklaus, Frank
%D 2021-02-10
%K peer-reviewed